News Release

JX Advanced Metals Corporation (President: Hayashi Yoichi, hereinafter "the Company") is pleased to announce the establishment of a new collaborative research division at the Research Institute of Electronics within National University Corporation Shizuoka University (President: Hizume Kazuyuki, hereinafter "Shizuoka University"). This initiative strengthens collaboration between the Company and Shizuoka University and aims to accelerate technological development in crystalline materials.

　

In the JX Advanced Metals Group Long-Term Vision 2040, the Company has established a basic policy of contributing to the realization of a sustainable society as a global leader in semiconductor materials and ICT materials. As part of our strategy for new business creation, we are expanding our portfolio with a focus on advanced materials, including next-generation semiconductor materials and photonics materials. Among these, our crystalline materials--such as indium phosphide (InP) and cadmium zinc telluride (CdZnTe) substrates--are essential advanced materials for optical applications in fields such as next-generation communications, autonomous driving, defense, aerospace, and healthcare. These fields, particularly generative AI, are expected to see significant market growth. To position these materials as core pillars of our next-generation business, we are actively advancing their technological development. As progress in these fields drives demand for crystalline materials with even higher performance, the Company has established a new collaborative research division at Shizuoka University to accelerate innovation.

　

Shizuoka University, centered on the Research Institute of Electronics, is actively pursuing cutting-edge research in applied optics, electrical and electronic measurement, and materials and device technologies. It is also promoting the establishment of an international research hub in the field of semiconductor crystals. The Company believes that by integrating Shizuoka University's advanced technologies and academic expertise, we can accelerate the development of technologies that precisely meet market needs, particularly in the development of new crystal growth techniques. Furthermore, we expect this collaboration to contribute not only to technological development but also to human resource development. 

　

We will continue to contribute to social progress and innovation as a global leader in advanced materials.

　

Reference
Overview of Collaboration Division

Name	Compound Semiconductor Crystal Research Division
Location	Research Institute of Electronics, Shizuoka University
Term	August 1, 2025 - September 30, 2027
Main contents of division	Development of Crystal Growth Technology

　

Research Institute of Electronics, Shizuoka University