Compound Semiconductors and Crystal Materials
                        InP Substrates
 
                                JX Advanced Metals products with their consistently high quality are winning customer acclaim and confidence.
We manufacture InP for III-V compound semiconductors. We supply products meeting the latest demand and product requirements.
| Product name | InP (indium phosphide)Substrates | 
|---|---|
| Primary Applications | Light emitting elements, light receiving elements, high-speed electronic devices, infrared detectors, etc. | 
Lineup
| Size | Orientation | Dopant | |
|---|---|---|---|
| InP Substrates | 2inch 3inch 4inch | (100) | S, Sn, Zn, Fe, None | 
Application Examples
 
                                        Mobile Base Stations
 
                                        Data Centers
 
                                        Optical Modules
(Light Emitting Elements, Light Receiving Elements)
 
                                        Solar Power
Proposals for new InP applications
High-performance collision prevention sensor made feasible
 
                                        Laser radar at eye-safe wavelength made feasible
 
 
                                        Features of InP Substrates
- We have long been providing InP substrates as essential materials for light emitting and receiving elements in optical communications.
High machining accuracy
- For improved device quality, we provide substrates with high processing precision.
 
                                            ※Total Thickness Variation
Low dislocation defect density
- With our crystal growth optimization technology, we are able to achieve low dislocation defect density in large substrates.
TOP
 
                                        Avg. 37 cm-2
Max. 664 cm-2
Bottom
 
                                        Avg. 15 cm-2
Max. 581 cm-2
EPD map of 4-inch S-doped InP substrate
Morphology after epitaxial growth
- Optimizing the surface orientation of our substrates contributes to their excellent surface uniformity following epitaxial growth.
 
                                        | InGaAs | 0.05 μm | 
|---|---|
| InP | 2.1 μm | 
| InGaAs | 4.0 μm | 
| InP | 2.0 μm | 
| S-InP Sub. | |
Technology for preventing substrate chipping after processing
- Special edge treatment on our substrates can reduce substrate breakage and chipping in device manufacturing processes.
 
                                         
                                        Conventional processing
 
                                        New processing technology
Electron microscope cross-sectional image
Reduction of surface impurities on the substrates
Conventional substrate
 
                                        Improved substrate
 
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