Compound Semiconductors and Crystal Materials
InP Substrates
JX Advanced Metals products with their consistently high quality are winning customer acclaim and confidence.
We manufacture InP for III-V compound semiconductors. We supply products meeting the latest demand and product requirements.
| Product name | InP (indium phosphide)Substrates |
|---|---|
| Primary Applications | Light emitting elements, light receiving elements, high-speed electronic devices, infrared detectors, etc. |
Lineup
| Size | Orientation | Dopant | |
|---|---|---|---|
| InP Substrates | 2inch 3inch 4inch |
（100） | S, Sn, Zn, Fe, None |
Application Examples
Optical Modules
(Light Emitting Elements, Light Receiving Elements)
Mobile Base Stations
Data Centers
Proposals for new applications
High-performance collision prevention sensor made feasible
Features
High machining accuracy
- For improved device quality, we provide substrates with high processing precision.
TTV (Total Thickness Variation) : 1.5µm
Low dislocation defect density
- With our crystal growth optimization technology, we are able to achieve low dislocation defect density in large substrates.
TOP
Avg. 37 cm-2
Max. 664 cm-2
Bottom
Avg. 15 cm-2
Max. 581 cm-2
EPD map of 4-inch S-doped InP substrate
Morphology after epitaxial growth
- Optimizing the surface orientation of our substrates contributes to epitaxial growth with excellent surface treatment uniformity.
| InGaAs | 0.05 μm |
|---|---|
| InP | 2.1 μm |
| InGaAs | 4.0 μm |
| InP | 2.0 μm |
| S-InP Sub. | |
Technology for preventing substrate chipping after processing
- Special edge treatment on our substrates can reduce substrate breakage and chipping in device manufacturing processes.
Conventional processing
New technology processing
Microscope image of substrate edge
Reduction of surface impurities on the substrates
- Optimizing the substrate surface treatment contributes to reducing impurities (Si, C) on the substrate and interface after epitaxial growth.
Conventional substrate
Improved substrate
SIMS Depth Profile After Epitaxial Growth
Contact Information
From the Web
Inquiries accepted 24 hours a day