Under DevelopmentMg₂Si Substrates

• Detects a wide range of wavelengths from visible light (VIS) to near infrared (NIR) and shortwave infrared (SWIR) with Mg₂Si single material.
• High crystallinity enables fabrication of high-sensitivity photodiodes. (Rocking curve: FWHM = 8 arcsec)
• Since photo-detection function can be achieved using Mg₂Si alone, a simple device structure consisting of a PN-junction of the Mg₂Si layer can be used. (no hetero-epitaxial growth required)
• Carrier concentration (10¹⁶–10¹⁹ cm^-3) and P/N conduction type can be easily controlled by impurity doping.
• Non-toxic and RoHS compliant.
• Mg₂Si substrates of 2 inches and larger are under development.

• Detects a wide range of wavelengths from visible light (VIS) to near infrared (NIR) and shortwave infrared (SWIR) with a single material.
• Mg₂Si can detect a wider range of wavelengths than Si, into the infrared range.
• Mg₂Si is expected to have higher detection sensitivity (D*) than Ge.

　　ー：Below Average

　　★：Average

　★★：Good

★★★：Excellent

• Since the photo-detection function can be achieved using Mg₂Si alone, a simple device structure consisting of a PN-junction of the Mg₂Si layer can be used (no hetero-epitaxial growth required).
• Mg₂Si single crystal can be used in the bulk region as a photo absorber, whereas InGaAs and other materials require hetero-epitaxial growth on substrates to form thin films as photo absorbers.

Composed of elements that are abundantly available in the Earth’s crust, it is a cheap material with low environmental burden.