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Under DevelopmentMg2Si Single Crystal for Infrared Detector

Joint research between Ibaraki University and JX Advanced Metals

Mg2Si (Magnesium Silicide) single crystal is a semiconductor material that can detect a wide range of wavelengths, from visible light (VIS) to near infrared (NIR) and shortwave infrared (SWIR), and is expected to be used for various sensors.

Application Examples

Enables acquisition of information that cannot be captured by visible light alone.

Image of contamination inspection

Application Examples for Mg2Si Single Crystal

Image Sensors
Contamination inspection
Crop inner-damage evaluation
Surveillance cameras unaffected by fog
3D Sensing
LiDAR
Others
Blood glucose sensor
Water content measurement

etc.

What Can Be achieved with Mg2Si Single Crystal

  • Detects a wide range of wavelengths from visible light (VIS) to near infrared (NIR) and shortwave infrared (SWIR) with Mg2Si single material.
  • High crystallinity enables fabrication of high-sensitivity photodiodes. (Rocking curve: FWHM = 8 arcsec)
  • Since photo-detection function can be achieved using Mg2Si alone, a simple device structure consisting of a PN-junction of the Mg2Si layer can be used. (no hetero-epitaxial growth required)
  • Carrier concentration (1016–1019 cm-3) and P/N conduction type can be easily controlled by impurity doping.
  • Non-toxic and RoHS compliant.
  • Bulk single-crystal wafers of 2 inches and larger are under development.
Mg₂Si single crystal wafer
Mg2Si single crystal wafer
Infrared sensor fabricated on Mg₂Si single crystal wafer
Infrared sensor fabricated on Mg2Si single crystal wafer

Detection Wavelength Range of Mg2Si

  • Detects a wide range of wavelengths from visible light (VIS) to near infrared (NIR) and shortwave infrared (SWIR) with a single material.
  • Mg2Si can detect a wider range of wavelengths than Si, into the infrared range.
  • Mg2Si is expected to have higher detection sensitivity (D*) than Ge.

Example of Device Structure Using Mg2Si

  • Since the photo-detection function can be achieved using Mg2Si alone, a simple device structure consisting of a PN-junction of the Mg2Si layer can be used (no hetero-epitaxial growth required).
  • Mg2Si single crystal can be used in the bulk region as a photo absorber, whereas InGaAs and other materials require hetero-epitaxial growth on substrates to form thin films as photo absorbers.
Example of device structure using Mg₂Si
Example of device structure using Mg2Si
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