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Compound Semiconductors and Crystal Materials

CdZnTe (CdTe) Substrates

CdZnTe (CdTe) Substrates

JX Advanced Metals products with their consistently high quality are winning customer acclaim and confidence. We manufacture CdZnTe (CdTe) for II-VI compound semiconductors. We supply products meeting the latest demand and product requirements.

Product name CdZnTe (CdTe) (cadmium telluride) Substrates
Primary Applications Infrared detectors, radiation detectors

Lineup

  Size（mm） Orientation Dopant
CdZnTe Substrates 10×10-
95×95		 （111）,（211）,（100） Zn, None
High resistivity CZT Lineup Size（mm） Thickness(mm) Resistivity(Ωcm) μτ(cm2/V) Standard pixel design
Bare substrate Up to 60x60 0.5–5.0 107–1011 Electron:
1x10-4–2x10-3
Hole:
1x10-5–9x10-5		 -
Planar detector Up to 10x10 -
Pixel detector Up to 40x40 Pixel pitch: 75 μm
Pixel size: 50 μm

Application Examples

Infrared Sensors for Space and Environmental Use
Infrared Sensors for Space and Environmental Use
Solar Power
Solar Power
Radiation Sensors for Medical and Analysis Use
Radiation Sensors for Medical and Analysis Use
X-ray Inspection
X-ray Inspection
ɤ-ray Compton Camera
ɤ-ray Compton Camera

Features of CdZnTe Substrates

  • Large-diameter CdZnTe single crystals of the world’s highest quality are achieved using our proprietary crystal growing technology.
  • CdZnTe can detect radiation with higher precision than other materials, for stable X-ray detection.
  • Our CdZnTe substrates with uniform Zn concentration enable customers to produce larger infrared sensors.
Large-area CdZnTe substrate
Large-area CdZnTe substrate
Uniform Zn concentration distribution in CdZnTe substrate
Uniform distribution of Zn concentration across CdZnTe crystal surface (%)
Slight traces of tellurium precipitate on adjusted substrate
Slight traces of tellurium precipitate on adjusted substrate

Features of high-resistance CdZnTe substrates for radiation sensor use

High-resistance CdZnTe Substrate
High-resistance CdZnTe Substrate
Metal interconnect formation on a CdZnTe substrate
Metal interconnect formation is possible
(left: planar device; right: pixel electrodes)
  • The high resistance results in low dark current.
  • Polarization does not occur, thanks to the outstanding stability.
  • Excellent interoperability with application-specific integrated circuits (ASIC) is possible.
  • Can be supplied as bare substrate or with planar device or pixel electrodes.
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